Saturation of Optical Degradation in a-Si:H Films with Different Morphologies
- 1 December 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (12A), L2245
- https://doi.org/10.1143/jjap.27.l2245
Abstract
The saturation effect of the optical degradation in hydrogenated amorphous silicon films (a-Si:H) deposited at various temperatures T s has been studied by means of photoconductivity measurements. It was confirmed that the saturation is mainly related to the simultaneous annealing at a higher light-soaking temperature T 1 (≧20°C) as well as the depletion of the weak Si-Si bonds at lower T1 (≦0°C). The weak bond density (1016∼1018/cm3) estimated from the low-temperature saturation effect decreases with increasing T s corresponding to the growth of Si clusters.Keywords
This publication has 9 references indexed in Scilit:
- Preparation of a-Si:H Films Resistive to the Staebler-Wronski EffectJapanese Journal of Applied Physics, 1988
- Optical Degradation of a-Si:H films with Different MorphologyJapanese Journal of Applied Physics, 1988
- Light-induced degradation and thermal recovery of the photoconductivity in hydrogenated amorphous silicon filmsJournal of Applied Physics, 1986
- Effects of Hydrogen Dilution of Silane on Properties of Glow-Discharged Undoped Hydrogenated SiliconJapanese Journal of Applied Physics, 1986
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- Kinetics of the metastable optically induced ESR ina-Si:HPhysical Review B, 1985
- Effect of Substrate Temperature on Properties of Glow-Discharged Hydrogenated Amorphous SiliconJapanese Journal of Applied Physics, 1984
- Trapping parameters of dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1982
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977