7000 h continuous wave operation of multiple quantum well laser on Si at 50 °C
- 24 March 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (12), 1614-1615
- https://doi.org/10.1063/1.118632
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Crystallinity and Schottky diode characteristics of GaAs grown on Si by metalorganic chemical vapor depositionJournal of Applied Physics, 1990
- First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrateApplied Physics Letters, 1988
- Growth of GaAs on Si by MOVCDJournal of Crystal Growth, 1984