Crystallinity and Schottky diode characteristics of GaAs grown on Si by metalorganic chemical vapor deposition

Abstract

The crystallinity of GaAs grown on Si with various intermediate layers by metalorganic chemical vapor deposition and characteristics of Schottky diodes fabricated on the grown GaAs/Si have been studied. The GaAs/Si with an Al_0.55Ga_0.45P intermediate layer has both good crystallinity, x‐ray full width at half maximum of 188 arc sec, and a smooth surface. The Schottky diode fabricated on the GaAs/Si with an Al_0.55Ga_0.45P intermediate layer also shows good forward and reverse current‐voltage characteristics with an ideality factor of 1.06, as good as for an n‐type GaAs substrate. However, a relatively large leakage current is observed under reverse and small forward bias. This leakage current is caused by generation and recombination through the centers related to dislocations in the GaAs/Si.