Step Smoothing by Radical and Ion Assisted Chemical Vapor Deposition

Abstract

A novel step smooting method called radical and ion assisted chemical vapor deposition (RID), is proposed. In this method, plasma chemical vapor deposition and reactive ion etching occur simultaneously on the surface. The bias sputtering and RID methods are compared and RID is found to provide better step coverage. A silicon oxide deposition experiment is performed in a planar diode-type reactor to verify this method. Experimentation shows that smooth step coverage with rounded edges is obtained for films at room temperature, while high quality films are fabricated at 400°C.