Effective Mass of Holes in GaAs
- 1 January 1966
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 13 (2), K119-K121
- https://doi.org/10.1002/pssb.19660130243
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Electrical Properties of p‐Type ZnSnAs2 Crystals at Low TemperaturesPhysica Status Solidi (b), 1965
- Dependence of the Thermal E.M.F. on the Hole Concentration in Gallium Arsenide CrystalsPhysica Status Solidi (b), 1965
- Measurement of the Conductivity Effective Mass in Semiconductors Using Infrared ReflectionPhysical Review B, 1964
- The valence band structure of the III–V compoundsJournal of Physics and Chemistry of Solids, 1962
- Determination of Optical Constants and Carrier Effective Mass of SemiconductorsPhysical Review B, 1957