Metal-oxide-semiconductor field-effect transistors fabricated in laterally seeded epitaxial Si layers on SiO2

Abstract

Metal‐oxide‐semiconductor field‐effect transistors (MOSFET’s) were fabricated in laterally seeded epitaxial Si layers on SiO₂, using cw Ar laser irradiation. FET’s were distributed in various regions of the epitaxial films grown on SiO₂, as well as directly on a Si substrate. Electronic properties were found to be good when compared with that for bulk Si, even though mobility at the SiO₂ edge was somewhat poor. The results are discussed in connection with the crystal qualities examined through use of optical and electron microscopy.