Thermal and Injection Annealing of Neutron-Irradiated p-Type Silicon between 76°K and 300°K
- 1 January 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 16 (6), 28-32
- https://doi.org/10.1109/tns.1969.4325501
Abstract
Measurements of minority carrier lifetime damage constant and divacancy growth following neutron irradiation at 76°K have been used to characterize further the annealing of neutron damage in silicon below 300°K. It has been shown that electron injection into p-type silicon at 76°K causes recovery of the neutron induced defect clusters with the simultaneous appearance of divacancies. Comparison of isochronal annealing curves of damage constant taken with and without prior injection at 76°K illustrates the nature of cluster annealing below 300°K. The thermal annealing results are shown to agree with previous annealing measurements of the carrier removal rate.Keywords
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