Electronic wavelength tuning with semiconductor integrated etalon interference lasers

Abstract

A novel method for broadband quasicontinuous wavelength tuning in GaAs-GaAlAs semiconductor lasers is reported. The wavelenth tuning experiment is performed with an interferometric laser consisting of a resonator with curved and straight segments. By separately pumping different segments of the laser the output wavelength can be tuned over a wide range. The outstanding features of the device are (1) very stable single longitudinal mode and stable transverse mode operation, and (2) a wavelength tuning range of as much as 90 Å.