Behavior of Manganese in GaAs
- 1 June 1962
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 33 (6), 2007-2008
- https://doi.org/10.1063/1.1728882
Abstract
Hall measurements on manganese‐doped gallium arsenide reveal a single acceptor level for this impurity with an ionization energy of 0.1 ev. The ionization energy and segregation coefficient, ks=0.05, appear to be independent of concentration over the range NA=6×1017−1×1020/cm3.Keywords
This publication has 3 references indexed in Scilit:
- Energy-Level Model for High-Resistivity Gallium ArsenideNature, 1961
- Photoelectronic Analysis of High Resistivity Crystals: (a) GaAs, (b) Sb2S3Journal of Applied Physics, 1960
- Chemical Interactions Among Defects in Germanium and SiliconBell System Technical Journal, 1956