Silicon dots/clusters in silicon nitride: photoluminescence and electron spin resonance
- 1 September 1999
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 353 (1-2), 20-24
- https://doi.org/10.1016/s0040-6090(99)00180-7
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Intrinsic band-edge photoluminescence from silicon clusters at room temperaturePhysical Review B, 1996
- Stable and efficient electroluminescence from a porous silicon-based bipolar deviceApplied Physics Letters, 1996
- Oxygen defect center red room temperature photoluminescence from freshly etched and oxidized porous siliconJournal of Applied Physics, 1995
- Photoluminescence study of defects in ion-implanted thermal SiO2 filmsJournal of Applied Physics, 1995
- Visible photoluminescence in Si+-implanted silica glassJournal of Applied Physics, 1994
- Correlation of the structural and optical properties of luminescent, highly oxidized porous siliconJournal of Applied Physics, 1994
- Photoluminescence of Si-Rich SiO2 Films: Si Clusters as Luminescent CentersJapanese Journal of Applied Physics, 1993
- X-ray photoelectron spectroscopy observations of argon-ion bombardment effects on phase separated structures such as SiNx alloys or Si/Si3N4 interfacesJournal of Vacuum Science & Technology A, 1986
- Electroluminescence studies in silicon dioxide films containing tiny silicon islandsJournal of Applied Physics, 1984
- On silicon nitride conductivityPhysica Status Solidi (a), 1980