Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
Top Cited Papers
- 21 June 2016
- journal article
- review article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Emerging and Selected Topics in Power Electronics
- Vol. 4 (3), 707-719
- https://doi.org/10.1109/jestpe.2016.2582685
Abstract
Gallium nitride (GaN) power devices are an emerging technology that have only recently become available commercially. This new technology enables the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This paper reviews the characteristics and commercial status of both vertical and lateral GaN power devices, providing the background necessary to understand the significance of these recent developments. In addition, the challenges encountered in GaN-based converter design are considered, such as the consequences of faster switching on gate driver design and board layout. Other issues include the unique reverse conduction behavior, dynamic R ds,on , breakdown mechanisms, thermal design, device availability, and reliability qualification. This review will help prepare the reader to effectively design GaN-based converters, as these devices become increasingly available on a commercial scale.Keywords
Funding Information
- Engineering Research Center Program within the National Science Foundation and the Department of Energy (EEC-1041877)
- CURENT Industry Partnership Program
- Bredesen Center for Interdisciplinary Research and Graduate Education
This publication has 53 references indexed in Scilit:
- Evaluation of 600 V GaN based gate injection transistors for high temperature and high efficiency applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2015
- Investigation of the dynamic on-state resistance of 600V normally-off and normally-on GaN HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2015
- Reliability studies of vertical GaN devices based on bulk GaN substratesMicroelectronics Reliability, 2015
- GaN Devices in Resonant LLC Converters: System-level considerationsIEEE Power Electronics Magazine, 2015
- Dynamic performances of GaN-HEMT on Si in cascode configurationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2014
- Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTsIEEE Transactions on Power Electronics, 2013
- Normally-Off GaN-on-Si transistors enabling nanosecond power switching at one kilowattPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2013
- GaN Gate Injection Transistor with integrated Si Schottky barrier diode for highly efficient DC-DC convertersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2012
- 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -ResistanceIEEE Electron Device Letters, 2011
- GaN Power Transistors on Si Substrates for Switching ApplicationsProceedings of the IEEE, 2010