New Model for Interface Charge-Carrier Mobility: The Role of Misfit Dislocations
- 21 October 1968
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 21 (17), 1252-1256
- https://doi.org/10.1103/PhysRevLett.21.1252
Abstract
It is suggested that consideration of misfit dislocations is essential for analysis of mobility in metal-oxide-semiconductor inversion layers. Occurrence of such dislocations is generally expected for interfaces. Also, aspects of "surface" state behavior fit well with the dislocation model.Keywords
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