Experimental Determination of Single-Event Upset (SEU) as a Function of Collected Charge in Bipolar Integrated Circuits

1 January 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 31 (6), 1167-1174
https://doi.org/10.1109/tns.1984.4333476

Abstract

Single-Event Upset (SEU) in bipolar integrated circuits (ICs) is caused by charge collection from ion tracks in various regions of a bipolar transistor. This paper presents experimental data which have been obtained wherein the range-energy characteristics of heavy ions (Br) have been utilized to determine the cross section for soft-error generation as a function of charge collected from single-particle tracks which penetrate a bipolar static RAM. The results of this work provide a basis for the experimental verification of circuit-simulation SEU modeling in bipolar ICs.

Keywords

This publication has 3 references indexed in Scilit:

Collection of charge from alpha-particle tracks in silicon devices
IEEE Transactions on Electron Devices, 1983
Modeling of Single-Event Upset in Bipolar Integrated Circuits
IEEE Transactions on Nuclear Science, 1983
Range and stopping-power tables for heavy ions
Atomic Data and Nuclear Data Tables, 1970

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