Some Experiments Using a Vacuum-Cleaned Silicon p-n Junction

Abstract

Measurements of the junction characteristics and the transport properties on either side of a vacuum‐cleaned silicon p‐n junction have been carried out. The changes in these properties during the adsorption of oxygen and hydrogen have also been investigated. In the clean condition, the value of (E_F−E_V) for both 21.5 ohm‐cm n type and 27 ohm‐cm p type was found to be 0.13–0.14 ev. When the silicon surface was clean, a large excess current across the junction was observed which disappeared during the adsorption of gas.