Weave Patterned Organic Transistors on Fiber for E-Textiles
- 24 January 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 52 (2), 269-275
- https://doi.org/10.1109/ted.2004.841331
Abstract
Flexible transistors were formed directly on fibers in a novel weave-masking fabrication process. Pentacene fiber transistors exhibit mobilities of >0.5 cm/sup 2//V-s measured at 20 V V/sub DD/ and operate stably under a wide range of flexion stress. Devices are defined and positioned solely by a weaving pattern, meaning that simple circuits could potentially be directly built into fabric during manufacturing. This development offers a novel approach for providing information routing within fabric, which is currently a major hurdle in electronic textile development.Keywords
This publication has 19 references indexed in Scilit:
- Fabrication of Advanced Functional Devices Combining Soft Chemistry with X‐ray Lithography in One StepAdvanced Materials, 2009
- Longevity enhancement of organic thin-film transistors by using a facile laminating passivation methodSynthetic Metals, 2003
- Electronic Textiles Charge AheadScience, 2003
- High Performance Organic Thin Film TransistorsMRS Proceedings, 2003
- High-mobility polymer gate dielectric pentacene thin film transistorsJournal of Applied Physics, 2002
- Fully patterned all-organic thin film transistorsApplied Physics Letters, 2002
- Electronic sensing of vapors with organic transistorsApplied Physics Letters, 2001
- Multi-parameter gas sensors based on organic thin-film-transistorsSensors and Actuators B: Chemical, 2000
- Low-Voltage Organic Transistors on Plastic Comprising High-Dielectric Constant Gate InsulatorsScience, 1999
- Field-effect transistors made from solution-processed organic semiconductorsSynthetic Metals, 1997