Abstract
A careful analysis of IV curves under illumination makes it possible to characterize the different parameters leading to an increase of the open‐circuit voltage Voc of MIS silicon solar cells with respect to classical Schottky barrier solar cells. The separate influence of the effective barrier height and of the quality factor of the diode upon Voc is emphasized. An over‐all conversion efficiency over 8% under AM1 illumination is reported for a large‐area (2.5 cm2) MIS cell.