Production of solar cells by recoil implantation
- 1 May 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (9), 491-494
- https://doi.org/10.1063/1.88828
Abstract
Photodiodes have been produced by recoil implantation of Al and Ga into Si, using inert‐gas‐ion bombardment. Yields as large as 40 implanted Ga atoms per incoming Xe ion have been observed. The diodes were characterized by optical‐window thicknesses from 0.14 to ∼1 μm.Keywords
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