Channeling in low energy boron ion implantation

Abstract

The effects of both planar and axial channeling on the profile of 5‐keV boron ions implanted into (100) oriented silicon wafers are demonstrated. A tilt angle of 12° from the (100) axis in a ‘‘random’’ crystallographic direction is required to minimize the (100) axial channeling tail. It is also shown that the effect of channeling along 100 planar channels produces a negligible addition to the channeling tail, whereas channeling along the (110) planar channels produces a measurable contribution. Implantation through a thin, 8‐nm, thermally grown silicon dioxide layer with the ion beam aligned along the (100) direction produces an ion profile comparable to an offset of 9° in a random direction.