The effect of the anneal ambient on implanted GaAs and the occurrence of compensated regions in Si implants
- 15 April 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (8), 432-434
- https://doi.org/10.1063/1.89435
Abstract
It has been shown that the ease with which Ga can diffuse through an SiO2 film on a Si‐ion‐implanted sample of GaAs can be used to advantage to change the stoichiometry of the sample by annealing in an ambient consisting of H2+HCl+GaCl. The use of the same ambient with a Se‐implanted sample leads to a reduction in both the mobility and the degree of activation. Both bulk and epitaxial samples which had been coated with either SiO2 or Si3N4 and implanted to 1015 cm−2 with 400‐keV Si ions were found to contain compensated or p‐type regions after annealing at 900 °C. A model is suggested to account for this effect.Keywords
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