Growth of GaInAs-InP multiquantum wells on garnet (GGG=Gd3Ga5O12) substrate by metalorganic chemical vapor deposition
- 15 March 1986
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (6), 2261-2263
- https://doi.org/10.1063/1.336374
Abstract
Ga0.47In0.53As‐InP multiquantum wells grown by low‐pressure metalorganic chemical vapor deposition on garnet (GGG=Gd3Ga5O12 with a=12.383 Å) substrates are presented for the first time. The x‐ray diffraction pattern shows that the orientation of the epitaxial layer is (111) while the underlying substrate orientation is (100). The photoluminescence at 77 K is due to the GaInAs layers.Keywords
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