The vertical heterojunction MOSFET
- 1 December 1998
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 336 (1-2), 299-305
- https://doi.org/10.1016/s0040-6090(98)01284-x
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Vertical MOS technology with sub-0.1 µm channel lengthsElectronics Letters, 1995
- A 40 nm gate length n-MOSFETIEEE Transactions on Electron Devices, 1995