Solidification kinetics of pulsed laser melted silicon based on thermodynamic considerations

Abstract

The measured solidification velocities in silicon after pulsed laser melting are analyzed in terms of thermodynamic and kinetic considerations. Both interface and thermal transport limited growth regimes are observed. From the observed kinetics in the 1–6‐m/s regime, the undercooling at the liquid‐solid interface can be calculated. At velocities ≤6 m/s the undercooling increases with interface velocity at the rate of 15±5 deg/m/s.