Intermodulation Characteristics of X-Band IMPATT Amplifiers
- 1 December 1972
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 20 (12), 805-812
- https://doi.org/10.1109/tmtt.1972.1127890
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Special problems in IMPATT diode power amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1972
- The Effects of Doping Profile on Reflection-Type Impatt Diode AmplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1971
- Characteristics of multisignal and noise-modulated high-power microwave amplifiersIEEE Transactions on Electron Devices, 1971
- Large-Signal Operation of Avalanche-Diode AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1970
- Large-Signal Equivalent Circuits of Avalanche Transit-Time DevicesIEEE Transactions on Microwave Theory and Techniques, 1970
- Effect of Harmonic and Subharmonic Signals on Avalanche-Diode Oscillator Performance (Correspondence)IEEE Transactions on Microwave Theory and Techniques, 1970