SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications
- 1 May 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 46 (5), 572-589
- https://doi.org/10.1109/22.668665
Abstract
No abstract availableThis publication has 108 references indexed in Scilit:
- Scaling issues and Ge profile optimization in advanced UHV/CVD SiGe HBT'sIEEE Transactions on Electron Devices, 1997
- A 230-Watt S-band SiGe heterojunction bipolar transistorIEEE Transactions on Microwave Theory and Techniques, 1996
- A 5-GHz SiGe HBT return-to-zero comparator for RF A/D conversionIEEE Journal of Solid-State Circuits, 1996
- Degradation of Si/sub 1-x/Ge/sub x/ epitaxial heterojunction bipolar transistors by 1-MeV fast neutronsIEEE Transactions on Nuclear Science, 1995
- Low-frequency noise in polysilicon emitter bipolar transistorsIEEE Transactions on Electron Devices, 1995
- Re-engineering silicon: Si-Ge heterojunction bipolar technologyIEEE Spectrum, 1995
- Sub-20 ps ECL circuits with high-performance super self-aligned selectively grown SiGe base (SSSB) bipolar transistorsIEEE Transactions on Electron Devices, 1995
- A 1.9 GHz low-voltage silicon bipolar receiver front-end for wireless personal communications systemsIEEE Journal of Solid-State Circuits, 1995
- Tradeoff between 1/f noise and microwave performance in AlGaAs/GaAs heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1994
- 1/f noise in n-p-n GaAs/AlGaAs heterojunction bipolar transistors:iImpact of intrinsic transistor and parasitic series resistancesIEEE Transactions on Electron Devices, 1993