Copper in Germanium: Recombination Center and Trapping Center
- 15 June 1956
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 102 (6), 1455-1457
- https://doi.org/10.1103/physrev.102.1455
Abstract
The time-dependent photoconductivity of copper-doped -type and -type germanium bridges has been measured between 130°K and 293°K. Temporary hole traps were found in the -type samples at the lower temperatures but no traps were observed in the type. Trap concentrations agreed with the density of copper atoms to within a factor of two and were at least 100 times higher than undoped crystals. The trappings levels are 0.2 ev above the valence band; the capture cross section for holes, , is and independent of temperature while the capture cross section for electrons, , is temperature-dependent with an activation energy greater than 0.1 ev. As a result of this temperature dependence of , the 0.2-ev copper level changes from a recombination center at room temperature to a hole trap at lower temperatures.
Keywords
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