A Totally Wet Etch Fabrication Technology for Amorphous Silicon Thin Film Transistors
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The effects of metal-n/sup +/ interface and space charge limited conduction on the performance of amorphous silicon thin-film transistorsIEEE Transactions on Electron Devices, 1994
- Reactive ion etch damages in inverted, trilayer thin-film transistorApplied Physics Letters, 1992
- Amorphous Silicon ElectronicsMRS Bulletin, 1992
- Enhanced mobility top-gate amorphous silicon thin-film transistor with selectively deposited source/drain contactsIEEE Electron Device Letters, 1992
- Reactive ion etching technology in thin-film-transistor processingIBM Journal of Research and Development, 1992