Molten-diffused silicon transistors
- 31 May 1961
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 2 (4), 216-221
- https://doi.org/10.1016/0038-1101(61)90041-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Resistivity Striations in Germanium Single CrystalsJournal of the Physics Society Japan, 1961
- Properties of Silicon and Germanium: IIProceedings of the IRE, 1958
- Hall and Drift Mobility in High-Resistivity Single-Crystal SiliconPhysical Review B, 1957
- Diffusion of Donor and Acceptor Elements in SiliconJournal of Applied Physics, 1956
- Effect of Base-Contact Overlap and Parasitic Capacities on Small-Signal Parameters of Junction TransistorsProceedings of the IRE, 1955