Comment on “Ground-state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix” [Appl. Phys. Lett. 69, 1343 (1996)]
- 19 May 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (20), 2765
- https://doi.org/10.1063/1.118977
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrixApplied Physics Letters, 1996
- Recombination dynamics of localized excitons in a CdSe/ZnSe/ single-quantum-well structurePhysical Review B, 1996
- Effect of hydrostatic pressure on strained CdSe/ZnSe single quantum wellsApplied Physics Letters, 1994
- Atomic layer epitaxy of CdSe/ZnSe short period superlatticesJournal of Crystal Growth, 1994
- Interfacial alloy formation in ZnSe/CdSe quantum-well heterostructures characterized by photoluminescence spectroscopyApplied Physics Letters, 1993
- Metalorganic molecular beam epitaxial growth and characterization of CdSe/ZnSe strained-layer single quantum wells and superlattices on GaAs substratesJournal of Applied Physics, 1992
- Band alignments in Zn(Cd)S(Se) strained layer superlatticesSemiconductor Science and Technology, 1992
- Critical thickness of common-anion II–VI strained layer superlattices (SLSs)Journal of Crystal Growth, 1992
- The growth of ZnSe / CdSe and ZnS / CdS strained layer superlattices by MOVPEJournal of Crystal Growth, 1990
- Growth of cubic (zinc blende) CdSe by molecular beam epitaxyApplied Physics Letters, 1989