Low-pressure growth of single-crystal silicon carbide
- 28 February 1986
- journal article
- Published by Elsevier in Materials Letters
- Vol. 4 (2), 77-80
- https://doi.org/10.1016/0167-577x(86)90053-4
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- ‘‘Buffer-layer’’ technique for the growth of single crystal SiC on SiApplied Physics Letters, 1984
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983
- Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate LayerJournal of the Electrochemical Society, 1980
- An Auger analysis of the SiO2-Si interfaceJournal of Applied Physics, 1976
- LEED and Auger electron observations of the SiC(0001) surfaceSurface Science, 1975