Interpretation of C-V measurements for determining the doping profile in semiconductors
- 31 January 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (1), 65-71
- https://doi.org/10.1016/0038-1101(80)90169-0
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
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- Ion-Implanted Phosphorous in Silicon: Profiles Using C-V AnalysisJournal of Applied Physics, 1971
- Silicon Impurity Distribution as Revealed by Pulsed MOS C-V MeasurementsJournal of the Electrochemical Society, 1971
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- On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance TechniqueIBM Journal of Research and Development, 1968