The Growth of Novel Silicon Materials
- 1 October 1986
- journal article
- Published by AIP Publishing in Physics Today
- Vol. 39 (10), 36-42
- https://doi.org/10.1063/1.881067
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Schottky barrier height measurements of epitaxial NiSi2 on SiApplied Physics Letters, 1985
- Strained-Layer Epitaxy of Germanium-Silicon AlloysScience, 1985
- Transistor action in Si/CoSi2/Si heterostructuresApplied Physics Letters, 1985
- Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor InterfacesPhysical Review Letters, 1984
- Transistor effect in monolithic Si/CoSi2/Si epitaxial structuresElectronics Letters, 1984
- Atomic structure of the NiSi2/(111)Si interfacePhilosophical Magazine A, 1982