Vertically stacked multiple-quantum-wire semiconductor diode lasers
- 28 October 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (18), 2225-2227
- https://doi.org/10.1063/1.106077
Abstract
We report the structure and lasing characteristics of GaAs/AlGaAs vertically stacked multiple-quantum-wire (QWR) semiconductor lasers grown by organometallic chemical vapor deposition on V-grooved substrates. The active region in these lasers consists of three crescent-shaped wires, placed at the center of a single-mode optical waveguide. The higher optical confinement factor, compared to single-QWR structures, leads to reduced threshold currents, as low as 0.6 mA for high-reflection coated devices at room temperature. The lower threshold carrier density results in oscillation at a lower QWR subband as compared to single-QWR laser structures.Keywords
This publication has 8 references indexed in Scilit:
- Threshold current reduction in patterned quantum well semiconductor lasers grown by molecular beam epitaxyApplied Physics Letters, 1990
- Double quantum wire GaAs/AlGaAs diode lasers grown by organometallic chemical vapor deposition on grooved substratesIEEE Photonics Technology Letters, 1990
- Single quantum wire semiconductor lasersApplied Physics Letters, 1989
- Stimulated emission in semiconductor quantum wire heterostructuresPhysical Review Letters, 1989
- Molecular beam epitaxy of GaAs/AlGaAs superlattice heterostructures on nonplanar substratesApplied Physics Letters, 1987
- Quantum well lasers--Gain, spectra, dynamicsIEEE Journal of Quantum Electronics, 1986
- Analysis and application of theoretical gain curves to the design of multi-quantum-well lasersIEEE Journal of Quantum Electronics, 1985
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982