Heteroepitaxy of GaAs on Si: The effect of i n s i t u thermal annealing under AsH3
- 6 June 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (23), 1976-1978
- https://doi.org/10.1063/1.99595
Abstract
This letter shows that an in situ thermal annealing step in AsH3/H2 during the metalorganic vapor phase epitaxy of GaAs on Si(001) improves the crystalline quality. The dislocation density is reduced (below 107 cm−2) without affecting the Si diffusion across the heterointerface or the strain level in the epilayer. The nature of the various near‐band‐gap recombinations present in the unannealed and annealed samples is discussed in light of selective photoluminescence experiments.Keywords
This publication has 14 references indexed in Scilit:
- Evidence by Raman spectroscopy and x-ray diffraction of a strong influence of H2O traces on the metalorganic vapor phase epitaxy of GaAs on SiApplied Physics Letters, 1987
- Heterointerface stability in GaAs-on-Si grown by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Improvements in the heteroepitaxy of GaAs on SiApplied Physics Letters, 1987
- Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substratesApplied Physics Letters, 1987
- Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealingApplied Physics Letters, 1986
- Metalorganic chemical vapor deposition of GaAs on Si for solar cell applicationsJournal of Crystal Growth, 1986
- Low pressure organometallic vapor phase epitaxial growth of device quality GaAs directly on (100) SiApplied Physics Letters, 1986
- Photoluminescence and x-ray properties of heteroepitaxial gallium arsenide on siliconJournal of Applied Physics, 1986
- Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxyJournal of Applied Physics, 1985
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVDJapanese Journal of Applied Physics, 1984