Low pressure organometallic vapor phase epitaxial growth of device quality GaAs directly on (100) Si

Abstract

The epitaxial growth and properties of GaAs layers directly deposited on (100) Si substrates using a low-temperature process are reported. The GaAs layers were grown by organometallic vapor phase epitaxy with a two-step process and without any high-temperature heat treatment of the Si substrates. The layers were of single domain with net carrier concentrations less than 1014 cm−3. Intentionally doped n-type layers (Nd≂1016 cm−3) showed room-temperature electron mobility of 5780 cm2/V s. The high structural quality of GaAs is demonstrated by device characteristics as well as by x-ray diffraction measurements. The observation that an intrinsic mechanism dominates the photoluminescence spectra is another indication of high quality epitaxy.