Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3and ferroelectric polymer
- 25 November 2009
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 42 (24)
- https://doi.org/10.1088/0022-3727/42/24/245101
Abstract
No abstract availableKeywords
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