Energy levels of nitrogen isoelectronic impurities in AlxGa1−xAs

Abstract

Energy levels of nitrogen isoelectronic impurities in Al_xGa_1−xAs doped with 10¹⁸ N cm⁻³ by ion implantation were determined from the photoluminescence measurements at 2 °K. Three bound states associated with nitrogen impurities are situated below the X₁ conduction‐band minima and the binding energies of the excitons bound to the states decrease with increasing composition ratio x.