Some second-phase structures in gallium arsenide annealed after implantation with zinc
- 15 July 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (2), 69-71
- https://doi.org/10.1063/1.88369
Abstract
After GaAs was implanted with 1015/cm2 60‐keV Zn ions at ambient temperature, annealing with a rf‐sputtered SiO2 passivating layer resulted in the formation of the second‐phase structures ZnGa2O4 at 800 °C and primarily Zn3As2 at 600 °C. Possible relationships between the second‐phase structures and the electrical properties of the ion‐implanted annealed regions are discussed.Keywords
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