Techniques for Small-Signal Analysis of Semiconductor Devices
- 1 October 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 4 (4), 472-481
- https://doi.org/10.1109/tcad.1985.1270145
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Harmonic distortion in a one-dimensional p-n-p transistorSolid-State Electronics, 1983
- A Description of MOS Internodal Capacitances for Transient SimulationsIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1982
- Modeling of bipolar device structures - physical simulationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1981
- A general four-terminal charging-current model for the insulated-gate field-effect transistor—ISolid-State Electronics, 1980
- Application of the transmission line equivalent circuit model to the analysis of the PN junction admittance under d.c. biasSolid-State Electronics, 1973
- Exact frequency dependent complex admittance of the MOS diode including surface states, Shockley-Read-Hall (SRH) impurity effects, and low temperature dopant impurity responseSolid-State Electronics, 1973
- A two-dimensional numerical FET model for DC, AC, and large-signal analysisIEEE Transactions on Electron Devices, 1973
- A small-signal calculation for one-dimensional transistorsIEEE Transactions on Electron Devices, 1971
- Numerical solutions for a one-dimensional silicon n-p-n transistorIEEE Transactions on Electron Devices, 1970
- An Integral Charge Control Model of Bipolar TransistorsBell System Technical Journal, 1970