Low threshold quantum dot injection laser emitting at 1.9 [micro sign]m
- 1 January 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (7), 670-672
- https://doi.org/10.1049/el:19980373
Abstract
Self-organised InAs quantum dots inserted in an (In, Ga)As matrix lattice matched to an InP substrate are used as an active region in an injection laser. Low threshold (11.4 A/cm2) lasing at 1.894 µm (77 K) via the states of the quantum dots is obtained. A material gain of the order of 104 cm–1 is estimated.This publication has 7 references indexed in Scilit:
- Low-threshold injection lasers based on vertically coupled quantum dotsJournal of Crystal Growth, 1997
- Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layerElectronics Letters, 1996
- Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasersElectronics Letters, 1996
- Room temperature lasing from InGaAs quantum dotsElectronics Letters, 1996
- Low threshold, large To injection laser emission from (InGa)As quantum dotsElectronics Letters, 1994
- Room-temperature operation of GaInAs/GaInAsP/InP SCH lasers with quantum-wire size active regionIEEE Journal of Quantum Electronics, 1993
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982