Nucleation and growth rate of a-Si alloys
- 1 January 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (1), 90-92
- https://doi.org/10.1063/1.93738
Abstract
From fitting the crystallization rate to an Arrhenius rate expression with a single activation energy we found that it is possible to distinguish a purely amorphous silicon sample from one having trace crystallinity. Whenever microcrystallites are present whether from heavy P doping or heat treatment, the ‘‘activation energy’’ is approximately 1 eV, whereas purely amorphous silicon has an activation energy of 3–4 eV. In other words, the exponent on time in the Avrami expression is different for the nucleation and growth processes.Keywords
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