A gallium arsenide infra-red-sensitive diode made by the diffusion of chromium
- 1 January 1968
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 1 (1), 25-28
- https://doi.org/10.1088/0022-3727/1/1/304
Abstract
The construction of a GaAs p-i-n diode in which the i region is formed by diffusion of chromium into n-type material is described. The diode exhibits a current-controlled negative resistance with a threshold voltage which may be reduced by illumination. The electrical and photoelectrical properties were found to be in qualitative agreement with theory.Keywords
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