Regrowth Behaviour of Ge Implanted Si
- 16 August 1979
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 54 (2), 513-516
- https://doi.org/10.1002/pssa.2210540210
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- Spatially varied activation of ion-implanted As during the regrowth of amorphous layers in SiJournal of Applied Physics, 1978
- Electrical Activation of Implanted Arsenic in Silicon during Low Temperature AnnealJournal of the Electrochemical Society, 1978
- Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layersJournal of Applied Physics, 1977
- Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ionsJournal of Applied Physics, 1977
- Particularities of crystalline to amorphous state conversion in silicon heavily damaged by 140 keV Si++ ionsPhysica Status Solidi (a), 1976
- Regrowth behavior of ion-implanted amorphous layers on 〈111〉 siliconApplied Physics Letters, 1976