Donor-acceptor pair emission in β-SiC doped with boron
- 16 March 1973
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 16 (1), K67-K70
- https://doi.org/10.1002/pssa.2210160154
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Luminescence of the aluminium centre in cubic SiC: Dependence of the recombination rates on the intensity of the light excitationJournal of Physics and Chemistry of Solids, 1968
- Luminescence Efficiency of Silicon Carbide Doped with Boron and NitrogenJournal of the Electrochemical Society, 1967
- Growth and Properties of β-SiC Single CrystalsJournal of Applied Physics, 1966
- Preparation and Photoluminescence of Silicon Carbide Phosphors Doped with Group IIIa Elements and/or NitrogenJournal of the Electrochemical Society, 1966
- Optical Properties of Cubic SiC: Luminescence of Nitrogen-Exciton Complexes, and Interband AbsorptionPhysical Review B, 1964