Gap State Spectroscopy in Amorphous Selenium Photoreceptors

Abstract

We propose a method useful for studying the energy distribution of deep gap states in amorphous semiconductors. The method is a sensitive and direct technique based upon the analysis of time dependence of residual voltage in photoreceptors under isothermal conditions. This enables us to map out the energy distribution of deep gap states in amorphous semiconductors. Experimental results using the method for amorphous selenium photoreceptors are demonstrated. Our results are in good agreement with those in the literature.