Above-threshold analysis of double-heterostructure diode lasers with laterally tapered active regions
- 15 November 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (10), 877-879
- https://doi.org/10.1063/1.91781
Abstract
An above‐threshold analysis of double‐heterostructure lasers with laterally tapered active regions is presented. Results for lowest‐order mode threshold, differential quantum efficiency, and higher‐order transverse‐mode threshold are shown to compare well with experimental observations. A design is presented for a 40‐mA‐threshold laser (275 μm in length) predicted to operate kink free, single transverse mode at ≈50% differential quantum efficiency up to ≈40 mW.Keywords
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