Eigensehaften der Dotierungsniveaus von Mangan und Vanadium in Silizium
- 16 April 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 64 (2), 549-556
- https://doi.org/10.1002/pssa.2210640219
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Dotierungseigenschaften von Eisen in SiliziumPhysica Status Solidi (a), 1981
- Zum nachweis von Minoritätsträger-Traps in halbleiternPhysica Status Solidi (a), 1980
- The defect levels in p-type silicon doped with manganeseJournal of Applied Physics, 1977
- Determination of deep energy levels in Si by MOS techniquesApplied Physics Letters, 1972
- Electron Spin Resonance in SemiconductorsPublished by Elsevier ,1962
- Properties of Silicon Doped with ManganesePhysical Review B, 1956