Recoil oxygen implants and thermal redistribution of oxygen in through-oxide arsenic-implanted Si
- 1 October 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (7), 564-566
- https://doi.org/10.1063/1.92795
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Thermal redistribution of oxygen during solid-phase regrowth of arsenic-implanted amorphized SiApplied Physics Letters, 1981
- Redistribution of oxygen within damage regions of boron-implanted siliconApplied Physics Letters, 1981
- Low-temperature redistribution and gettering of oxygen in siliconJournal of Applied Physics, 1981
- Gettering of mobile oxygen and defect stability within back-surface damage regions in SiApplied Physics Letters, 1981
- An application of the Boltzmann transport equation to ion range and damage distributions in multilayered targetsJournal of Applied Physics, 1980
- The effects of the recoil-implanted oxygen in Si on the electrical activation of As after through-oxide implantationJournal of Applied Physics, 1979