Very low interface recombination velocity in (Al,Ga)As heterostructures grown by organometallic vapor-phase epitaxy
- 15 October 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (8), 4253-4256
- https://doi.org/10.1063/1.341298
Abstract
We show that measurements of minority-carrier lifetimes in thin layer (Al,Ga)As double heterostructures grown by organometallic vapor-phase epitaxy can be severely influenced by modulation doping of the layer studied. Samples where this effect has been eliminated exhibit a dominantly nonradiative luminescence decay, from which we deduce an interface recombination velocity of only 18 cm s−1, which is among the lowest ever reported for a GaAs/(Al,Ga)As interface.Keywords
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