Thin, highly doped layers of epitaxial silicon deposited by limited reaction processing
- 14 April 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (15), 1012-1014
- https://doi.org/10.1063/1.96620
Abstract
Limited reaction processing was used to deposit ultrathin, highly doped layers of epitaxial silicon. Multilayer structures consisting of alternating undoped and heavily boron-doped regions were fabricated in situ. The interlayer doping profiles of these structures, as determined by secondary ion mass spectroscopy, are abrupt. Van der Pauw measurements indicate that the electrical characteristics of the p+ epitaxial films are comparable to bulk material.Keywords
This publication has 3 references indexed in Scilit:
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- Methods for Defect Evaluation of Thin Oriented Silicon Epitaxial Layers Using a Wet Chemical EtchJournal of the Electrochemical Society, 1982