Laser annealing of diffusion-induced imperfections in silicon

Abstract

High‐temperature diffusion of boron or phosphorus into silicon leads to the formation of spherical precipitates and/or dislocation loops in the diffused layer which influence electrical junction characteristics. These diffusion‐induced imperfections can be removed by high‐energy pulse laser treatment. The boron or phosphorus atoms previously contained in the precipitates become electrically active and the resulting dopant concentration can exceed the solid solubility limit.